AON6266 general description product summary v ds i d (at v gs =10v) 30a r ds(on) (at v gs =10v) < 15m? r ds(on) (at v gs =4.5v) < 19m? applications 100% uis tested 100% rg tested symbol v ? synchronus rectification in dc/dc and ac/dc conve rters ? industrial and motor drive applications 60 parameter drain-source voltage absolute maximum ratings t a =25c unless otherwise noted v maximum units AON6266 dfn 5x6 tape & reel 3000 60v n-channel alphamos orderable part number package type form minimum order quantity 60v ? trench power alphamos (mos mv) technology ? low r ds(on) ? low gate charge ? optimized for fast-switching applications top view 12 3 4 87 6 5 pin1 dfn5x6 top view bottom view g ds v ds v gs i dm i as avalanche energy l=0.1mh c e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc power dissipation b 15 t c =100c 10s p d 60 72 38 gate-source voltage pulsed drain current c 22.5 drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2.7 55 3.3 va 20 v w i d v a 20 a 90 i dsm 10 mj 20 13 30 maximum junction-to-ambient a c/w r q ja 20 45 25 thermal characteristics parameter max t a =70c 3.2 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c 5.0 power dissipation a t a =25c t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current rev.1.0: april 2014 www.aosmd.com page 1 of 6
symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2.0 2.5 v 12 15 t j =125c 20.5 25 15 19 m? g fs 100 s v sd 0.72 1 v i s 30 a c iss 1340 pf c oss 123 pf c rss 10 pf r g 0.7 1.5 2.3 ? q g (10v) 21 30 nc q g (4.5v) 9 15 nc q gs 4.7 nc q gd 2.6 nc t d(on) 6 ns t r 2.5 ns t d(off) 22 ns t f 2.5 ns reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz v ds =v gs, i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a v ds =0v, v gs =20v maximum body-diode continuous current g input capacitance gate-body leakage current turn-off delaytime turn-off fall time v gs =10v, v ds =30v, r l =1.5 w , r gen =3 w diode forward voltage dynamic parameters v gs =4.5v, i d =18a turn-on rise time gate source charge gate drain charge total gate charge switching parameters turn-on delaytime m? v gs =10v, v ds =30v, i d =20a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v r ds(on) static drain-source on-resistance t f 2.5 ns t rr 17 ns q rr 60 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off fall time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev.1.0: april 2014 www.aosmd.com page 2 of 6
typical electrical and thermal characteristics 0 20 40 60 80 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 8 10 12 14 16 18 20 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =4.5v i d =18a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =3v 3.5v 4.5v 10v 4v 6v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 10 20 30 40 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev.1.0: april 2014 www.aosmd.com page 3 of 6
typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) c oss c rss v ds =30v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) v > or equal to 4.5v 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) r q jc =3.3 c/w rev.1.0: april 2014 www.aosmd.com page 4 of 6
typical electrical and thermal characteristics 0 10 20 30 40 50 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) t a =25 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) r q ja =55 c/w rev.1.0: april 2014 www.aosmd.com page 5 of 6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l unclamped inductive switching (uis) test circuit & waveforms vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.1.0: april 2014 www.aosmd.com page 6 of 6
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